Physical-chemical research of conductive materials structure on the basis of indium oxide obtained by sol-gel method

It is known that indium oxide alloyed by tin is a semiconductor of n-type with high conductivity, depending on preparation conditions and kind of a material (monocrystals, ceramics, thin films) varies within from 10^-4 up to 5*10⁴ S/m. One of perspective ways of obtaining a current-conducting material on the basis of alloyed indium oxide is the sol-gel method based on a joint deposition of hydroxides of metals with the following crystallization of oxides at heat treatment. In this paper, the results of investigation of phase formation and change of concentration of free electrons (Ne) in indium tin oxide system during heat treatment of coprecipitated hydroxides of indium and tin from nitric and muriatic solutions and also for comparison melts of salt nitrates by an alkaline reactant (NH₄OH) are considered