Title :
A 77-GHz to 90-GHz bidirectional amplifier for half-duplex front-ends
Author :
Kim, Joohwa ; Parlak, Mehmet ; Buckwalter, James F.
Author_Institution :
Univ. of California-San Diego, La Jolla, CA, USA
Abstract :
A W-band, bidirectional constructive wave amplifier is proposed that eliminates the need for a T/R switch. The amplifier allows amplification of either a forward or backward traveling wave. The measured amplifier has a peak gain of 16 dB and bandwidth of 14.5 GHz at 90 GHz and the center frequency can be electronically controlled between 77 and 90 GHz. The circuit is fabricated in a 0.12 μm SiGe BiCMOS process, occupies an area of 0.47 mm2, and consumes approximately 32 mA from a 2 V supply. To the author´s knowledge, this is the first W-band, bidirectional amplifier in a silicon/silicon-germanium process.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; field effect MIMIC; millimetre wave amplifiers; travelling wave amplifiers; BiCMOS process; SiGe; W-band amplifier; backward traveling wave; bandwidth 14.5 GHz; bidirectional constructive wave amplifier; circuit fabrication; forward traveling wave; frequency 77 GHz to 90 GHz; half-duplex front-ends; silicon/silicon-germanium process; size 0.12 mum; voltage 2 V; BiCMOS integrated circuits; Gain; MOS devices; Noise; Power transmission lines; Scattering parameters; Silicon germanium;
Conference_Titel :
Custom Integrated Circuits Conference (CICC), 2010 IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-5758-8
DOI :
10.1109/CICC.2010.5617386
