DocumentCode
2787820
Title
Observation of long-lived screening in low-temperature-grown GaAs photoconductive switches
Author
Loata, G. ; Löffler, T. ; Thomson, M.D. ; Lisauskas, A. ; Roskos, H.G.
Author_Institution
Physikalisches Institut, Johann Wolfgang Goethe-Universitÿt, Max von Laue Str. 1, D-60438 Frankfurt, Germany
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
A subgroup of photoexcited carriers in biased few-¿m-sized LT-GaAs switches is shown to recombine on a time scale of nanoseconds. This can induce field screening amounting to tens of percent of the applied field.
Keywords
Charge carrier processes; Charge carriers; Electron traps; Gallium arsenide; Laser beams; Laser excitation; Optical switches; Photoconducting materials; Photoconductivity; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2007. QELS '07
Conference_Location
Baltimore, MD, USA
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/QELS.2007.4431360
Filename
4431360
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