Title :
Observation of long-lived screening in low-temperature-grown GaAs photoconductive switches
Author :
Loata, G. ; Löffler, T. ; Thomson, M.D. ; Lisauskas, A. ; Roskos, H.G.
Author_Institution :
Physikalisches Institut, Johann Wolfgang Goethe-Universitÿt, Max von Laue Str. 1, D-60438 Frankfurt, Germany
Abstract :
A subgroup of photoexcited carriers in biased few-¿m-sized LT-GaAs switches is shown to recombine on a time scale of nanoseconds. This can induce field screening amounting to tens of percent of the applied field.
Keywords :
Charge carrier processes; Charge carriers; Electron traps; Gallium arsenide; Laser beams; Laser excitation; Optical switches; Photoconducting materials; Photoconductivity; Ultrafast optics;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2007. QELS '07
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/QELS.2007.4431360
