A generic computer simulation model to characterize photolithography manufacturing area in an IC fab facility

Author

Prasad, Kowdle

Author_Institution

Intel Corp., Chandler, AZ, USA

fYear

1990

fDate

1-3 Oct 1990

Firstpage

66

Lastpage

72

Abstract

A generic computer simulation model has been developed to characterize the photolithography area in a semiconductor fabrication facility at Intel. Use of simulation to study the impact of policy decisions on key manufacturing system parameters like product cycle time, line throughput, work-in-process inventory, and utilizations are discussed. Details on the structured modeling approach taken to develop reusable simulation models are also discussed. A number of simulation sensitivity analyses were performed for the photolithography manufacturing area. These included experiments to analyze: (a) the impact of a changing quantity of process equipment on manufacturing performance, (b) the impact of a changing quantity of operators on manufacturing performance, (c) variation in throughput time through each of the lithography steps, (d) utilization of each piece of process equipment, and (e) utilization of each of the operators

Keywords

digital simulation; electronic engineering computing; integrated circuit manufacture; modelling; photolithography; sensitivity analysis; IC fab facility; Intel; computer simulation model; line throughput; manufacturing system parameters; photolithography manufacturing area; policy decisions; product cycle time; semiconductor fabrication; simulation sensitivity analyses; structured modeling; work-in-process inventory; Analytical models; Computational modeling; Computer simulation; Fabrication; Lithography; Manufacturing processes; Manufacturing systems; Sensitivity analysis; Throughput; Virtual manufacturing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Manufacturing Technology Symposium, 1990 Proceedings, Competitive Manufacturing for the Next Decade. IEMT Symposium, Ninth IEEE/CHMT International

Conference_Location

Washington, DC

Type

conf

DOI

10.1109/IEMT9.1990.114982

Filename

114982