Title :
A 40-Gb/s optical transceiver front-end in 45nm SOI CMOS technology
Author :
Kim, Joohwa ; Buckwalter, James F.
Author_Institution :
Univ. of California-San Diego, La Jolla, CA, USA
Abstract :
A low-power, 40-Gb/s optical transceiver front-end is demonstrated in a 45 nm silicon on insulator (SOI) CMOS technology. A modulator driver uses floating body devices to realize voltage swing of 2 VPP with a small-signal gain of 7.6 dB over 33 GHz. The optical receiver consists of a transimpedance amplifier (TIA) and post-amplifier with 55-dB·Ω of transimpedance over 30 GHz. The group-delay variation is ±3.9 ps over the 3-dB bandwidth and the average input-referred noise density is 20.47 pA/√Hz. The TIA consumes 9 mW from a 1 V supply for a transimpedance figure of merit of 1874.5 Ω/pJ. To the author´s knowledge, this represents the lowest power consumption for a transmitter and receiver operating at 40-Gb/s in a CMOS process.
Keywords :
CMOS analogue integrated circuits; operational amplifiers; silicon-on-insulator; transceivers; SOI CMOS technology; bit rate 40 Gbit/s; floating body device; frequency 33 GHz; group-delay variation; noise density; optical transceiver front-end; post-amplifier; power 9 mW; silicon on insulator technology; size 45 nm; transimpedance amplifier; voltage 1 V; Bandwidth; CMOS integrated circuits; Driver circuits; Logic gates; Modulation; Optical receivers; Transceivers;
Conference_Titel :
Custom Integrated Circuits Conference (CICC), 2010 IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-5758-8
DOI :
10.1109/CICC.2010.5617418