Title :
Experimental modeling of the etch characteristics of polysilicon in CCl4/He/O2 plasmas
Author :
May, G.S. ; Huang, J. ; Spanos, C.J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
The objective is to obtain a comprehensive set of statistical models for a variety of process data which accurately represent the behavior of a specific piece of equipment under a wide range of etch conditions. In particular, this study focuses on the control of etch rate, uniformity, and selectivity of n+-doped polysilicon in a CCl4/He/O2 plasma generated by a Lam Research Autotech 490 single-wafer system operating at 13.56 MHz. These responses were monitored under the variation of six input parameters: RF power, pressure, electrode spacing, and the three gas flows. These parameters are fitted to quadratic response surface models. Although the models obtained are generated for a specific process running on a specific piece of equipment, the methodology outlined is general enough to be applied to many semiconductor manufacturing processes
Keywords :
elemental semiconductors; modelling; semiconductor technology; silicon; sputter etching; statistical analysis; 13.56 MHz; Autotech 490; CCl4-He-O2 plasma; Lam Research; RF power; electrode spacing; etch characteristics; etch rate; gas flows; modeling; n+ doped semiconductor; plasma etching; polycrystalline Si; polysilicon; pressure; quadratic response surface models; single-wafer system; statistical models; Condition monitoring; Control systems; Electrodes; Etching; Fluid flow; Helium; Plasma applications; Power system modeling; Radio frequency; Response surface methodology;
Conference_Titel :
Electronic Manufacturing Technology Symposium, 1990 Proceedings, Competitive Manufacturing for the Next Decade. IEMT Symposium, Ninth IEEE/CHMT International
Conference_Location :
Washington, DC
DOI :
10.1109/IEMT9.1990.114983
