DocumentCode
2788130
Title
Modelling and Measurements on minimum-width transmission-lines from 10–67GHz in 65nm CMOS
Author
van Zeijl, P.T.M. ; van der Zanden, H.T. ; Theunissen, B.B.A. ; Termeer, H.A.H.
Author_Institution
Philips Res., Eindhoven, Netherlands
fYear
2010
fDate
19-22 Sept. 2010
Firstpage
1
Lastpage
4
Abstract
Transmission-line models for high-frequency wideband applications should preferably directly relate to the physical dimensions and effects. Various simulation modes (both linear and non-linear in the frequency- and time-domain) point towards the use of a straightforward model using frequency dependent resistances, inductances, and capacitances. However, not all simulators accept frequency dependent elements. This paper presents the design, characterisation and modelling results of 35, 50 and 70 ohm minimum-width transmission lines and 90 degree corners in the TSMC 65 nm process for high frequency (10-67 GHz) applications using frequency-independent elements.
Keywords
CMOS integrated circuits; transmission line theory; CMOS technology; TSMC process; frequency 10 GHz to 67 GHz; frequency-independent element; high-frequency wideband application; minimum-width transmission line; resistance 35 ohm; resistance 50 ohm; resistance 70 ohm; size 65 nm; transmission-line model; Capacitance; Integrated circuit modeling; Loss measurement; Metals; Semiconductor device modeling; Transmission line measurements; Transmission lines;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference (CICC), 2010 IEEE
Conference_Location
San Jose, CA
ISSN
0886-5930
Print_ISBN
978-1-4244-5758-8
Type
conf
DOI
10.1109/CICC.2010.5617427
Filename
5617427
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