DocumentCode
278825
Title
A 30 W, 14-14.5 GHz solid state power amplifier
Author
Cheng, T.C.
Author_Institution
SSPA Microwave Corp., Mississauga, Ont., Canada
fYear
1991
fDate
33588
Firstpage
42370
Lastpage
42373
Abstract
Present, state-of-the-art, 30 watt, 14-14.5 GHz solid state power amplifier which has been developed and manufactured successfully. The author shows the block diagram of the seven-stage SSPA. This amplifier using four 5.5 watt internally matched GaAs FETs combined in parallel. The amplifier was driven with +12 volt DC-power supply at 40 A and -12 volt at 250 mA. The overall characteristics at 14-14.5 GHz obtained for the seven-stage amplifier was linear gain of 43 dB minimum
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; microwave amplifiers; power amplifiers; solid-state microwave circuits; 12 V; 14 to 14.5 GHz; 30 W; 40 A; 43 dB; GaAs; Ku-band; block diagram; characteristics; gain; semiconductors; seven-stage amplifier; solid state power amplifier;
fLanguage
English
Publisher
iet
Conference_Titel
Solid-State Power Amplifiers, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
182339
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