• DocumentCode
    2788408
  • Title

    Very low-threshold-current-density 1.34-μm GaInNAs/GaAs quantum well lasers with a quaternary-barrier structure

  • Author

    Jin, C.Y. ; Liu, H.Y. ; Zhang, S.Y. ; Airey, R. ; Hopkinson, M.

  • Author_Institution
    Department of Electronic & Electrical Engineering, University of Sheffield, S1 3JD, UK
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A quaternary-barrier structure is employed to reduce the strain at the interface between the quantum well and barriers for GaInNAs/GaAs materials. A very-low room-temperature threshold current density of 178A/cm2 is demonstrated with 1.34-μm GaInNAs/GaAs lasers.
  • Keywords
    Capacitive sensors; Gallium arsenide; Lattices; Nitrogen; Optical fiber communication; Optical materials; Power generation; Quantum well lasers; Radiative recombination; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics and Laser Science Conference, 2007. QELS '07
  • Conference_Location
    Baltimore, MD, USA
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/QELS.2007.4431396
  • Filename
    4431396
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2788408