Title :
W-band pulsed radar receiver in low cost CMOS
Author :
Zhang, Ning ; Kenneth, K.O.
Author_Institution :
Dept. of Elec. & Comp. Eng., Univ. of Florida, Gainesville, FL, USA
Abstract :
A CMOS heterodyne receiver integrating a phase-locked loop that includes a bulk of transmitter functions for W-band pulsed radar is realized using low leakage transistors of a low cost 65-nm bulk CMOS process with 5 thin and 1 thick metal layers used to manufacture cell phone RFIC´s. The peak conversion gain of receiver is 7 dB and the minimum NF is 10.8 dB between 78 and 88 GHz in measurement. The entire receiver front-end consumes ~190 mW.
Keywords :
CMOS analogue integrated circuits; phase locked loops; radar receivers; CMOS heterodyne receiver; W-band pulsed radar receiver; gain 7 dB; low cost CMOS; low leakage transistor; peak conversion gain; phase-locked loop; size 65 nm; transmitter function; CMOS integrated circuits; Gain; Metals; Mixers; Noise measurement; Radar; Receivers;
Conference_Titel :
Custom Integrated Circuits Conference (CICC), 2010 IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-5758-8
DOI :
10.1109/CICC.2010.5617452
