Title :
The effects of ionizing radiation on the data retention of static random access memories
Author :
Benedetto, J.M. ; Jordan, A. ; LaValley, N.
Author_Institution :
Aeroflex UTMC, Colorado Springs, CO, USA
Abstract :
The sensitivity of 4-transistor/2-resistor SRAMs to loss of stored data at nominal voltage levels is shown to increase following exposure to ionizing radiation. Pre-irradiation screening techniques and adjusted/modified device specifications can eliminate data retention failures during mission use
Keywords :
SRAM chips; failure analysis; low-power electronics; radiation effects; space vehicle electronics; data retention failure; ionizing radiation; low-voltage space electronics; screening technique; static random access memory; DRAM chips; Ionizing radiation; Leakage current; Manufacturing; Random access memory; SRAM chips; Springs; Temperature dependence; Testing; Voltage;
Conference_Titel :
Radiation Effects Data Workshop, 2000
Conference_Location :
Reno, NV
Print_ISBN :
0-7803-6474-0
DOI :
10.1109/REDW.2000.896263
