DocumentCode
2788647
Title
Mid-infrared optical upconversion by integrating an InAsSb photodetector with a GaAs light emitting diode
Author
Boucherif, Abderraouf ; Ban, Dayan ; Luo, Hui ; Dupont, Emmanuel ; Liu, H.C. ; Wasilewski, Z.R. ; Paltiel, Yossi
Author_Institution
Department of Electrical and Computer Engineering, University of Waterloo 200 University Avenue West, N2L 3G1, Canada
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
We report the fabrication and experimental results of a midinfrared optical up-converter that was fabricated using wafer fusion technology. Midinfrared optical upconversion from 4.0 to 0.84 ¿m was demonstrated at temperatures up to 200 K.
Keywords
Cameras; Gallium arsenide; Infrared detectors; Integrated optics; Light emitting diodes; Optical imaging; Photodetectors; Photodiodes; Stimulated emission; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2007. QELS '07
Conference_Location
Baltimore, MD, USA
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/QELS.2007.4431411
Filename
4431411
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