• DocumentCode
    2788743
  • Title

    SEU evaluation of SRAM memories for space applications

  • Author

    Scheick, L.Z. ; Swift, G.M. ; Guertin, S.M.

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    61
  • Lastpage
    63
  • Abstract
    SEU cross-sections were obtained for three different SRAM memories. The 1 Mbit White Electronics WMS128k8, the 256 kbit Austin MT5C2564 and the 256 kbit Austin MT5C2568 SRAMs were tested. The SEU thresholds, respectively were 1 MeV cm2/mg, 1.4 MeV cm2 /mg, and 1.8 MeV cm2/mg. SEL thresholds were also obtained. These were 37 MeV cm2/mg, 37 MeV cm2/mg and 59 MeV cm2/mg, respectively
  • Keywords
    SRAM chips; ion beam effects; space vehicle electronics; 1 Mbit; 256 kbit; Austin MT5C2564; Austin MT5C2568; SEU cross-section; SRAM memory; White Electronics WMS128k8; heavy ion irradiation; space electronics; Aerospace electronics; CMOS technology; Circuit testing; Electronic equipment testing; Laboratories; Power supplies; Random access memory; Space technology; System testing; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 2000
  • Conference_Location
    Reno, NV
  • Print_ISBN
    0-7803-6474-0
  • Type

    conf

  • DOI
    10.1109/REDW.2000.896270
  • Filename
    896270
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2788743