Title :
A Gallium Nitride Distributed Bragg Reflector cavity for integrated photonics applications
Author :
Hueting, N.A. ; Pugh, J.R. ; Engin, E. ; Zain, A. Md ; Sarua, A. ; Heard, P.J. ; Wang, T. ; Cryan, M.J.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Bristol, Bristol, UK
Abstract :
A deep etched 1D Distributed Bragg Reflector (DBR) cavity in GaN-AlN-Sapphire has been analytically modelled and simulated using 2D FDTD. A 3rd-order DBR has also been modelled including dye loaded polymer layer which can be used for emission enhancement characterization. A structure fabricated using a hybrid Electron Beam-Focused Ion Beam method was assessed using micro-photoluminescence.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflectors; finite difference time-domain analysis; focused ion beam technology; gallium compounds; integrated optics; photoluminescence; sapphire; wide band gap semiconductors; 2D FDTD; GaN-AlN-Al2O3; deep etched 1D distributed Bragg reflector cavity; dye loaded polymer layer; emission enhancement characterization; gallium nitride distributed Bragg reflector cavity; hybrid electron beam-focused ion beam method; integrated photonics applications; microphotoluminescence; Cavity resonators; Distributed Bragg reflectors; Etching; Fabrication; Finite difference methods; Gallium nitride; Time domain analysis; Distributed Bragg reflector; finite-difference time-domain (FDTD); focused ion beam;
Conference_Titel :
Transparent Optical Networks (ICTON), 2012 14th International Conference on
Conference_Location :
Coventry
Print_ISBN :
978-1-4673-2228-7
Electronic_ISBN :
2161-2056
DOI :
10.1109/ICTON.2012.6253827
