• DocumentCode
    2788919
  • Title

    SEU and TID testing of the Samsung 128 Mbit and the Toshiba 256 Mbit flash memory

  • Author

    Roth, D.R. ; Kinnison, J.D. ; Carkhuff, B.G. ; Lander, J.R. ; Bognaski, G.S. ; Chao, K. ; Swift, G.M.

  • Author_Institution
    Appl. Phys. Lab., Johns Hopkins Univ., Laurel, MD, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    96
  • Lastpage
    99
  • Abstract
    The Samsung KM29U128T 128 Mbit and the Toshiba TC58256FT/DC 256 Mbit flash memories were screened for use in the X2000 solid state recorded. Single Event Upset (SEU) and Total Ionizing Dose (TID) results are presented in this paper
  • Keywords
    flash memories; ion beam effects; 128 Mbit; 256 Mbit; Samsung KM29U128T; Toshiba TC58256FT/DC; flash memory; heavy ion irradiation; single event upset; total ionizing dose; Chaos; Charge pumps; FETs; Flash memory; Laboratories; Nonvolatile memory; Physics; Single event upset; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 2000
  • Conference_Location
    Reno, NV
  • Print_ISBN
    0-7803-6474-0
  • Type

    conf

  • DOI
    10.1109/REDW.2000.896277
  • Filename
    896277
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2788919