Title :
Radiation damage and annealing in 1310 nm InGaAsP/InP lasers
Author :
Gill, K. ; Cervelli, G. ; Grabit, R. ; Jensen, F. ; Vasey, F.
Author_Institution :
EP Div., CERN, Geneva, Switzerland
Abstract :
Radiation damage in 1310 nm InGaAsP/InP multi-quantum-well lasers caused by 0.8 MeV neutrons is compared with the damage from other radiation sources, in terms of the increase in laser threshold current. The annealing behavior is then presented both in terms of both temperature and forward-bias current dependence. The annealing can be described by a model where radiation induced defects have a uniform distribution of activation energies for annealing
Keywords :
III-V semiconductors; annealing; gallium arsenide; indium compounds; neutron effects; quantum well lasers; semiconductor device models; semiconductor device testing; 1310 nm; InGaAsP-InP; activation energies; annealing behavior; forward-bias current dependence; laser threshold current; multi-quantum-well lasers; neutrons; radiation damage; radiation induced defects; uniform distribution; Annealing; Collision mitigation; Fiber lasers; Indium phosphide; Laser modes; Neutrons; Optical fiber communication; Semiconductor lasers; Testing; Threshold current;
Conference_Titel :
Radiation Effects Data Workshop, 2000
Conference_Location :
Reno, NV
Print_ISBN :
0-7803-6474-0
DOI :
10.1109/REDW.2000.896282
