Title :
High energy electron effects on charge injection devices
Author :
Miller, Kyle B. ; Duncan, Mike ; Van Houten, Charles ; Carbone, Joe
Author_Institution :
Ball Aerosp. & Technol. Group, Boulder, CO, USA
Abstract :
Charge injection devices were tested for transient and total damage effects using high-energy electrons. The devices had acceptable image quality after 1 Mrad(Si) and operated during fluxes up to 8×109 e/cm2-s
Keywords :
CCD image sensors; charge-coupled devices; electron beam effects; transients; 1 Mrad; charge injection devices; fluxes; high energy electron effects; image quality; total damage effects; transient effects; Aerospace testing; Cameras; Charge coupled devices; Charge transfer; Dosimetry; Electrons; Extraterrestrial measurements; Image quality; MOS capacitors; Optical imaging;
Conference_Titel :
Radiation Effects Data Workshop, 2000
Conference_Location :
Reno, NV
Print_ISBN :
0-7803-6474-0
DOI :
10.1109/REDW.2000.896283
