• DocumentCode
    2789049
  • Title

    High energy electron effects on charge injection devices

  • Author

    Miller, Kyle B. ; Duncan, Mike ; Van Houten, Charles ; Carbone, Joe

  • Author_Institution
    Ball Aerosp. & Technol. Group, Boulder, CO, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    158
  • Lastpage
    162
  • Abstract
    Charge injection devices were tested for transient and total damage effects using high-energy electrons. The devices had acceptable image quality after 1 Mrad(Si) and operated during fluxes up to 8×109 e/cm2-s
  • Keywords
    CCD image sensors; charge-coupled devices; electron beam effects; transients; 1 Mrad; charge injection devices; fluxes; high energy electron effects; image quality; total damage effects; transient effects; Aerospace testing; Cameras; Charge coupled devices; Charge transfer; Dosimetry; Electrons; Extraterrestrial measurements; Image quality; MOS capacitors; Optical imaging;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 2000
  • Conference_Location
    Reno, NV
  • Print_ISBN
    0-7803-6474-0
  • Type

    conf

  • DOI
    10.1109/REDW.2000.896283
  • Filename
    896283
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2789049