RF-wafer scale integration: a new approach to active phased arrays

Describe a recently completed Westinghouse /DARPA effort in which many T/R (transmitter/receiver) modules are fabricated simultaneously on a single 3-inch GaAs wafer. Redundancy in circuit elements is utilized to obtain high yield. The resulting wafer of GaAs T/R cells is utilized as a layer within a more complex package that includes the individual radiating element. The authors update the progress which has been made in the program and present performance data and yield information. The overall packaging concept is called RF-WSI (wafer scale integration)