Title :
Light emitting diodes with extremely high extraction-efficiency for electroluminescence refrigeration
Author :
Yu, S.Q. ; Rider, N. ; Ding, D. ; Wang, J.-B. ; Johnson, S.R. ; Zhang, Y.H.
Author_Institution :
Center for Solid State Electronics Research & Department of Electrical Engineering, Arizona State University, Tempe, 85287, USA
Abstract :
InGaAs light emitting diodes with extremely high light extraction efficiency are fabricated by monolithically integrating the light emitting region with a suspended GaAs hemispherical lens. This design is being developed for electroluminescence refrigeration applications.
Keywords :
Electroluminescence; Etching; Fabrication; Gallium arsenide; Indium gallium arsenide; Lenses; Light emitting diodes; Luminescence; Refrigeration; Substrates;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2007. QELS '07
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/QELS.2007.4431445
