DocumentCode
2789851
Title
Far-infrared response of Schottky diodes: high-frequency limit
Author
Mordovets, N.A. ; Kotel´nikov, I.N. ; Shul´man, A.Ya.
Author_Institution
Academy of Sciences of the USSR
fYear
1989
fDate
0-0 1989
Firstpage
272
Lastpage
275
Abstract
The rolloff of the Schottky-diode responsivity in the far infrared have been theoretically and experimentally studied. The measured data are compared with the theory taking into account the retardation of the carrier distribution function with respect to high-frequency electric field in the depletion layer of the semiconductor. The new highest possible cutoff frequency, following from this theory, differs considerably from generally accepted one.
Keywords
Capacitance; Cutoff frequency; Detectors; Distribution functions; Electric variables measurement; Frequency dependence; Frequency estimation; Impedance; Motion detection; Schottky diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Millimeter Wave and Far-Infrared Technology, 1989. ICMWFT '89. International Conference on
Conference_Location
Beijing, China
Print_ISBN
0-87942-717-5
Type
conf
DOI
10.1109/ICMWFT.1989.763823
Filename
763823
Link To Document