Title :
High-speed GaN micro-LED arrays for data communications
Author :
Kelly, A.E. ; McKendry, J.J.D. ; Zhang, S. ; Massoubre, D. ; Rae, B.R. ; Green, R.P. ; Henderson, R.K. ; Dawson, M.D.
Author_Institution :
Sch. of Eng., Univ. of Glasgow, Glasgow, UK
Abstract :
We report the modulation performance of micro-light-emitting diode arrays with peak emission ranging from 370 to 520 nm, and emitter diameters ranging from 14 to 84 μm. Bandwidths in excess of 400 MHz and error-free data transmission up to 1.1Gbit/s is shown. These devices are shown integrated with electronic drivers, allowing convenient control of individual array emitters. Transmission using such a device is shown at 512 Mbit/s.
Keywords :
gallium compounds; light emitting diodes; GaN; bit rate 512 Mbit/s; data communications; high-speed GaN microLED arrays; micro-light-emitting diode arrays; modulation performance; size 14 mum to 84 mum; size 370 nm to 520 nm; Arrays; Bandwidth; CMOS integrated circuits; Data communication; Frequency response; Integrated optics; Modulation; complementary metal-oxide-semiconductor; high bandwidth; micro-light-emitting diodes (micro-LEDs); multi-channel;
Conference_Titel :
Transparent Optical Networks (ICTON), 2012 14th International Conference on
Conference_Location :
Coventry
Print_ISBN :
978-1-4673-2228-7
Electronic_ISBN :
2161-2056
DOI :
10.1109/ICTON.2012.6253883
