DocumentCode
2790618
Title
D - band silicon impatt diode
Author
Li-Rong Jin ; Mao-Sen Wang ; Ri-Hui Huang ; Wen-Xing Zhang ; Zhi-Yuan Huang ; Bao-Wen Qiao ; Dai-Yun Chen
Author_Institution
Unstitute of Nanjing Electronic Devices
fYear
1989
fDate
0-0 1989
Firstpage
447
Lastpage
449
Abstract
This paper reports the progress in D-band CW silicon IMPATT diode. The small-signal. computer simulation of a diode has been performed. The preliminary experiments of the single-drift IMPATT diode show a aw output power of 73 mW at 116.7GHz and 34mW at 126GHz, respectively.
Keywords
Circuits; Diodes; Doping profiles; Fabrication; Frequency; Impedance; Power generation; Silicon; Thermal conductivity; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Millimeter Wave and Far-Infrared Technology, 1989. ICMWFT '89. International Conference on
Conference_Location
Beijing, China
Print_ISBN
0-87942-717-5
Type
conf
DOI
10.1109/ICMWFT.1989.763876
Filename
763876
Link To Document