Title :
Novel large signal mathematical model of MM-wave gtinn device
Author :
Ning Chen ; Zhang-Liang Sun ; Si-Fan Li
Author_Institution :
Southeast University
Abstract :
The nonlinear characteristic of Gunn device is analyzed on the basis of device physics. A novel mathematical representation of the large signal dynamic characteristic of the Gunn device is presented.
Keywords :
Dielectric constant; Doping; Electron mobility; Gallium arsenide; Gunn devices; Integrated circuit modeling; Mathematical model; RF signals; Radio frequency; Voltage;
Conference_Titel :
Millimeter Wave and Far-Infrared Technology, 1989. ICMWFT '89. International Conference on
Conference_Location :
Beijing, China
Print_ISBN :
0-87942-717-5
DOI :
10.1109/ICMWFT.1989.763889
