DocumentCode :
2790954
Title :
Sub-quarter micron gate length high electron mobility transistors processing technology
Author :
Ynag, Y.
Author_Institution :
Academia Sinica
fYear :
1989
fDate :
0-0 1989
Firstpage :
532
Lastpage :
535
Abstract :
This paper describes the design principle of modulation doped AlGaAs/GaAs field effect transistors (HEMT). Processing steps of gate length as short as 0. 2 /spl mu/m with T-shape gate and the condition of the E-Beam lithography to obtain submicron gate length. Transcanductances of the order of 200ms/mm at room temperature and 375ms/mm at 77K are measured.
Keywords :
Buffer layers; Doping; Electrons; Epitaxial layers; Gallium arsenide; HEMTs; Impurities; MODFETs; Scattering; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Millimeter Wave and Far-Infrared Technology, 1989. ICMWFT '89. International Conference on
Conference_Location :
Beijing, China
Print_ISBN :
0-87942-717-5
Type :
conf
DOI :
10.1109/ICMWFT.1989.763898
Filename :
763898
Link To Document :
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