How to efficiently capture on-chip inductance effects: introducing a new circuit element K

On-chip inductance extraction and analysis is becoming increasing critical. Inductance extraction can be difficult, cumbersome and impractical on large designs as inductance depends on the current return path-which is typically unknown prior to extracting and simulating the circuit model. In this paper we propose a new circuit element, K, to model inductance effects, at the same time being easier to extract and analyze. K is defined as inverse of partial inductance matrix L, and has locality and sparsity normally associated with a capacitance matrix. We propose to capture inductance effects by directly extracting and simulating K, instead of partial inductance, leading to much more efficient procedure which is amenable to full chip extraction. This proposed approach has been verified through several simulation results.