DocumentCode :
2791198
Title :
Ultrafast carrier dynamics in semiconductor nanowires
Author :
Prasankumar, R.P. ; Wang, G.T. ; Clement, T. ; Choi, S.G. ; Picraux, S.T. ; Taylor, A.J.
Author_Institution :
Center for Integrated Nanotechnologies, Los Alamos National Laboratory, New Mexico 87545, USA
fYear :
2007
fDate :
6-11 May 2007
Firstpage :
1
Lastpage :
2
Abstract :
Time-resolved measurements of carrier dynamics in Ge and GaN nanowires reveal that carrier relaxation in these systems is governed by surface states and defects. This has significant implications for nanowire-based devices in photonics and thermoelectrics.
Keywords :
Gallium nitride; Luminescence; Nanowires; Optical films; Optical pumping; Probes; Substrates; Thermoelectric devices; Ultrafast optics; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2007. QELS '07
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
978-1-55752-834-6
Type :
conf
DOI :
10.1109/QELS.2007.4431568
Filename :
4431568
Link To Document :
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