Title :
Time-resolved photoluminescence of GaN nanowires of different crystallographic orientations
Author :
Chin, A.H. ; Ahn, T.S. ; Li, H. ; Vaddiraju, S. ; Bardeen, C.J. ; Ning, C.Z. ; Sunkara, M.K.
Author_Institution :
Center for Advanced Aerospace Materials and Devices, NASA Ames Research Center, Moffett Field California 94035, USA
Abstract :
Our studies of time-integrated and time-resolved photoluminescence of a-axis and c-axis GaN nanowires demonstrate that the blue-shifted ultraviolet photoluminescence in a-axis GaN nanowires relative to c-axis GaN nanowires can be attributed to surface state emission.
Keywords :
Aerospace materials; Crystallography; Electron traps; Frequency; Gallium nitride; Instruments; NASA; Nanowires; Photoluminescence; Spectroscopy;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2007. QELS '07
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/QELS.2007.4431569
