Title :
Microscopic modeling of the optical properties of dilute nitride semiconductor gain materials
Author :
Bückers, C. ; Koch, S.W. ; Thranhardt ; Hader, J. ; Moloney, J.V. ; Karcher, C. ; Heimbrodt, W. ; Kunert, B. ; Volz, K. ; Stolz, W.
Author_Institution :
Dept. of Phys., Philipps-Univ. Marburg, Marburg, Germany
Abstract :
In this presentation, we apply our microscopic approach to the promising GaP-based dilute nitride Ga(NAsP) material system. This new material class may realize a monolithic integration of direct laser material on silicon wafer, thus merging photonic and microelectronic elements.
Keywords :
III-V semiconductors; gallium compounds; laser materials processing; optical properties; GaNAsP; dilute nitride semiconductor gain materials; direct laser material; microelectronic element; monolithic integration; optical properties; photonic element; silicon wafer; Laser modes; Merging; Microelectronics; Monolithic integrated circuits; Optical materials; Optical microscopy; Semiconductor device modeling; Semiconductor lasers; Semiconductor materials; Silicon;
Conference_Titel :
Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-4079-5
Electronic_ISBN :
978-1-4244-4080-1
DOI :
10.1109/CLEOE-EQEC.2009.5192365
