DocumentCode
2791673
Title
Evidence of many-body, fermi-energy edge singularity in InN films grown on GaN buffer layers
Author
Mu, Xiaodong ; Ding, Yujie J. ; Wang, Kejia ; Jena, Debdeep ; Khurgin, Jacob B.
Author_Institution
Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
We observed the strong enhancement of photoluminescence intensities close to electron Fermi energy as the result of the breakdown of k-selection rule for radiaitive recombination due to the localization of holes in InN films.
Keywords
Buffer layers; Charge carrier processes; Electrons; Gallium nitride; Nonlinear optics; Optical films; Photoluminescence; Photonic band gap; Radiative recombination; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2007. QELS '07
Conference_Location
Baltimore, MD, USA
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/QELS.2007.4431594
Filename
4431594
Link To Document