• DocumentCode
    2791673
  • Title

    Evidence of many-body, fermi-energy edge singularity in InN films grown on GaN buffer layers

  • Author

    Mu, Xiaodong ; Ding, Yujie J. ; Wang, Kejia ; Jena, Debdeep ; Khurgin, Jacob B.

  • Author_Institution
    Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We observed the strong enhancement of photoluminescence intensities close to electron Fermi energy as the result of the breakdown of k-selection rule for radiaitive recombination due to the localization of holes in InN films.
  • Keywords
    Buffer layers; Charge carrier processes; Electrons; Gallium nitride; Nonlinear optics; Optical films; Photoluminescence; Photonic band gap; Radiative recombination; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics and Laser Science Conference, 2007. QELS '07
  • Conference_Location
    Baltimore, MD, USA
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/QELS.2007.4431594
  • Filename
    4431594