Title :
Electrical properties of ZrO2 thin film prepared by sol-gel method
Author :
Yoshimura, Noboru ; Itoi, Masashi ; Sato, Shigeki ; Taguchi, Haruo
Author_Institution :
Dept. of Electr. Eng., Min. Coll., Akita Univ., Japan
Abstract :
ZrO2 thin films were prepared by the sol-gel method using metal alkoxide (Zr(O-n-Bu)4). These films were monoclinic crystalline phase ZrO2, which cannot be prepared by general methods. The electrical properties of ZrO2 thin film show good electrical insulation. The ZrO2 thin film is expected to serve as capacitor and coating for insulating film
Keywords :
ceramics; dielectric thin films; electric strength; insulating thin films; sol-gel processing; zirconium compounds; ZrO2 thin films; capacitor dielectric film; electrical insulation; electrical properties; insulating coating film; insulating film; metal alkoxide; monoclinic crystalline phase; preparation; sol-gel method; zirconium n-butoxide; Atherosclerosis; Ceramics; Chemical vapor deposition; Costs; Crystallization; Insulation; Scanning electron microscopy; Semiconductor thin films; Temperature; Transistors;
Conference_Titel :
Properties and Applications of Dielectric Materials, 1991., Proceedings of the 3rd International Conference on
Conference_Location :
Tokyo
Print_ISBN :
0-87942-568-7
DOI :
10.1109/ICPADM.1991.172036
