• DocumentCode
    2792180
  • Title

    A GaN UV Light Emitting Diode

  • Author

    Akinwande, A.I. ; Goldenberg, B.L. ; Horning, R.D. ; King, J.

  • Author_Institution
    Honeywell Technology Center, Bloomington, MN
  • fYear
    1995
  • fDate
    7-9 Aug. 1995
  • Firstpage
    28
  • Lastpage
    29
  • Abstract
    In our studies, p-n junction LEDs were grown by MOCVD on (0001) sapphire substrates. The vertical MOCVD reactor has separate inlets for ammonia (NH3) and the metalorganics. The system held a pressure of 76 Torr with a constant hydrogen flow of 1.9 l/min. Source materials for this reactor included triethylaluminum (TEA), triethylgallium (TEG), bismethylcyclopentadienyl magnesium (MCp2Mg) and silane (SiH4.
  • Keywords
    Annealing; Chemical technology; Conducting materials; Contact resistance; Gallium nitride; Inductors; Light emitting diodes; MOCVD; P-n junctions; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Flat Panel Display Technology/Technologies for a Global Information Infrastructure/ICs for New Age Lightwave Communications/RF Optoelectronics, 1995 Digest of the LEOS Summer Topical Meetings
  • Conference_Location
    Keystone, CO, USA
  • Print_ISBN
    0-7803-2448-X
  • Type

    conf

  • DOI
    10.1109/LEOSST.1995.763984
  • Filename
    763984
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2792180