DocumentCode :
2792180
Title :
A GaN UV Light Emitting Diode
Author :
Akinwande, A.I. ; Goldenberg, B.L. ; Horning, R.D. ; King, J.
Author_Institution :
Honeywell Technology Center, Bloomington, MN
fYear :
1995
fDate :
7-9 Aug. 1995
Firstpage :
28
Lastpage :
29
Abstract :
In our studies, p-n junction LEDs were grown by MOCVD on (0001) sapphire substrates. The vertical MOCVD reactor has separate inlets for ammonia (NH3) and the metalorganics. The system held a pressure of 76 Torr with a constant hydrogen flow of 1.9 l/min. Source materials for this reactor included triethylaluminum (TEA), triethylgallium (TEG), bismethylcyclopentadienyl magnesium (MCp2Mg) and silane (SiH4.
Keywords :
Annealing; Chemical technology; Conducting materials; Contact resistance; Gallium nitride; Inductors; Light emitting diodes; MOCVD; P-n junctions; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Flat Panel Display Technology/Technologies for a Global Information Infrastructure/ICs for New Age Lightwave Communications/RF Optoelectronics, 1995 Digest of the LEOS Summer Topical Meetings
Conference_Location :
Keystone, CO, USA
Print_ISBN :
0-7803-2448-X
Type :
conf
DOI :
10.1109/LEOSST.1995.763984
Filename :
763984
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2792180
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