Title :
Power scaling of GaSb-based semiconductor disk lasers for the 2.X µm wavelength range
Author :
Rattunde, M. ; Rosener, B. ; Hempler, N. ; Hopkins, J.-M. ; Burns, D. ; Moser, R. ; Manz, C. ; Kohler, Klaus ; Wagner, J.
Author_Institution :
Fraunhofer Inst. fur Angewandte Festkorperphys., Freiburg, Germany
Abstract :
In this paper, we will present our results on different high-power GaSb-based optically pumped semiconductor disk lasers (OPSDLs) emitting in the 1.9-2.8 mum wavelength range, with the emphasis on the power scaling capability of these long-wavelength laser by using the following different concepts: increasing the pumped area, using multiple gain chips and using in-well pumped structures.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; quantum well lasers; GaInAsSb; in-well pumped structures; long-wavelength laser; multiple gain chip; optically pumped semiconductor disk lasers; power scaling capability; wavelength 1.9 mum to 2.8 mum; Gas lasers; Laser excitation; Optical pumping; Optical resonators; Power generation; Power lasers; Pump lasers; Quantum well lasers; Semiconductor lasers; Temperature;
Conference_Titel :
Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-4079-5
Electronic_ISBN :
978-1-4244-4080-1
DOI :
10.1109/CLEOE-EQEC.2009.5192436
