DocumentCode
2792844
Title
Power semiconductor device modelling dedicated to circuit simulation
Author
Leturcq, Philippe
Author_Institution
Lab. d´´Anal. et d´´Archit. des Syst., CNRS, Toulouse, France
fYear
1999
fDate
1999
Firstpage
19
Lastpage
26
Abstract
The aim of this paper is to recall the problematics of circuit simulation in the field of power electronics and to critically review recent approaches to semiconductor device modelling for that purpose. In particular, as far as hardware problems are concerned, the discussion puts forward the need for physics-based models taking into account the distributed nature of charge carrier transport
Keywords
circuit simulation; power semiconductor devices; semiconductor device models; transport processes; circuit simulation; distributed charge carrier transport; hardware problems; physics-based models; power electronics; power semiconductor device modelling; semiconductor device modelling; Circuit simulation; Computational modeling; Hardware; Power semiconductor devices; Power semiconductor switches; Power system analysis computing; Power system modeling; Power system simulation; Semiconductor devices; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location
Toronto, Ont.
ISSN
1063-6854
Print_ISBN
0-7803-5290-4
Type
conf
DOI
10.1109/ISPSD.1999.764034
Filename
764034
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