DocumentCode :
2792866
Title :
Power management issues for future generation microprocessors
Author :
Lee, Fred C. ; Zhou, Xunwei
Author_Institution :
Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
fYear :
1999
fDate :
1999
Firstpage :
27
Lastpage :
33
Abstract :
By reducing the power supply voltage, faster, lower power consumption, and high integration density data processing systems can be achieved. The current generation of high-speed CMOS processors (e.g. Alpha, Pentium, Power PC) are operating at above 300 MHz with 2.5 to 3.3 V output range. Future processors will be designed in the 1.1-1.8 V range to further enhance their speed-power performance. These new generations of microprocessors will present very dynamic loads with high current slew rates during transients. As a result, they will require a special power supply, a voltage regulator module (VRM), to provide well-regulated voltage. The VRMs should have high power densities, high efficiencies, and good transient performance. This paper addresses the critical technical issues to achieve this target for future generation microprocessors
Keywords :
CMOS digital integrated circuits; integrated circuit design; microprocessor chips; power supply circuits; technological forecasting; transient response; voltage regulators; 1.1 to 1.8 V; 2.5 to 3.3 V; 300 MHz; Alpha processor; Pentium processor; Power PC processor; VRM; current slew rate; data processing systems; dynamic loads; high-speed CMOS processors; integration density; microprocessors; power consumption; power density; power management; power supply; power supply voltage; processor design; processor voltage range; speed-power performance; transient performance; transients; voltage regulator module; CMOS process; Data processing; Energy consumption; Energy management; Microprocessors; Power generation; Power supplies; Power system management; Process design; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
ISSN :
1063-6854
Print_ISBN :
0-7803-5290-4
Type :
conf
DOI :
10.1109/ISPSD.1999.764036
Filename :
764036
Link To Document :
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