• DocumentCode
    2792866
  • Title

    Power management issues for future generation microprocessors

  • Author

    Lee, Fred C. ; Zhou, Xunwei

  • Author_Institution
    Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    27
  • Lastpage
    33
  • Abstract
    By reducing the power supply voltage, faster, lower power consumption, and high integration density data processing systems can be achieved. The current generation of high-speed CMOS processors (e.g. Alpha, Pentium, Power PC) are operating at above 300 MHz with 2.5 to 3.3 V output range. Future processors will be designed in the 1.1-1.8 V range to further enhance their speed-power performance. These new generations of microprocessors will present very dynamic loads with high current slew rates during transients. As a result, they will require a special power supply, a voltage regulator module (VRM), to provide well-regulated voltage. The VRMs should have high power densities, high efficiencies, and good transient performance. This paper addresses the critical technical issues to achieve this target for future generation microprocessors
  • Keywords
    CMOS digital integrated circuits; integrated circuit design; microprocessor chips; power supply circuits; technological forecasting; transient response; voltage regulators; 1.1 to 1.8 V; 2.5 to 3.3 V; 300 MHz; Alpha processor; Pentium processor; Power PC processor; VRM; current slew rate; data processing systems; dynamic loads; high-speed CMOS processors; integration density; microprocessors; power consumption; power density; power management; power supply; power supply voltage; processor design; processor voltage range; speed-power performance; transient performance; transients; voltage regulator module; CMOS process; Data processing; Energy consumption; Energy management; Microprocessors; Power generation; Power supplies; Power system management; Process design; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
  • Conference_Location
    Toronto, Ont.
  • ISSN
    1063-6854
  • Print_ISBN
    0-7803-5290-4
  • Type

    conf

  • DOI
    10.1109/ISPSD.1999.764036
  • Filename
    764036