DocumentCode
2792866
Title
Power management issues for future generation microprocessors
Author
Lee, Fred C. ; Zhou, Xunwei
Author_Institution
Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
fYear
1999
fDate
1999
Firstpage
27
Lastpage
33
Abstract
By reducing the power supply voltage, faster, lower power consumption, and high integration density data processing systems can be achieved. The current generation of high-speed CMOS processors (e.g. Alpha, Pentium, Power PC) are operating at above 300 MHz with 2.5 to 3.3 V output range. Future processors will be designed in the 1.1-1.8 V range to further enhance their speed-power performance. These new generations of microprocessors will present very dynamic loads with high current slew rates during transients. As a result, they will require a special power supply, a voltage regulator module (VRM), to provide well-regulated voltage. The VRMs should have high power densities, high efficiencies, and good transient performance. This paper addresses the critical technical issues to achieve this target for future generation microprocessors
Keywords
CMOS digital integrated circuits; integrated circuit design; microprocessor chips; power supply circuits; technological forecasting; transient response; voltage regulators; 1.1 to 1.8 V; 2.5 to 3.3 V; 300 MHz; Alpha processor; Pentium processor; Power PC processor; VRM; current slew rate; data processing systems; dynamic loads; high-speed CMOS processors; integration density; microprocessors; power consumption; power density; power management; power supply; power supply voltage; processor design; processor voltage range; speed-power performance; transient performance; transients; voltage regulator module; CMOS process; Data processing; Energy consumption; Energy management; Microprocessors; Power generation; Power supplies; Power system management; Process design; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location
Toronto, Ont.
ISSN
1063-6854
Print_ISBN
0-7803-5290-4
Type
conf
DOI
10.1109/ISPSD.1999.764036
Filename
764036
Link To Document