Title :
Static and dynamic thermal characteristics of IGBT power modules
Author :
Yun, Chan-Su ; Regli, P. ; Waldmeyer, Jürg ; Fichtner, Wolfgang
Author_Institution :
Integrated Syst. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland
Abstract :
This paper discusses the thermal behavior of an IGBT power module under static and dynamic conditions. Thermal interference and solder size effects were investigated. In the dynamic response, the thermal impedance was characterized by two transition times. For a pulse width modulation (PWM) scheme, conduction and switching losses are considered and a RC component model is proposed to predict the thermal characteristics in steady state periodic condition
Keywords :
dynamic response; insulated gate bipolar transistors; losses; modules; power bipolar transistors; power semiconductor switches; pulse width modulation; semiconductor device models; semiconductor device packaging; size effect; soldering; thermal analysis; thermal resistance; IGBT power module; IGBT power modules; RC component model; conduction; dynamic conditions; dynamic response; dynamic thermal characteristics; pulse width modulation; solder size effects; static conditions; static thermal characteristics; steady state periodic condition; switching losses; thermal behavior; thermal characteristics; thermal impedance; thermal interference; transition times; Impedance; Insulated gate bipolar transistors; Interference; Multichip modules; Predictive models; Pulse width modulation; Space vector pulse width modulation; Steady-state; Switching loss; Thermal conductivity;
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5290-4
DOI :
10.1109/ISPSD.1999.764037
