Title :
High performance wide trench IGBTs for motor control applications
Author :
Bhalla, A. ; Gladish, J. ; Polny, A. ; Sargeant, P. ; Dolny, G.
Author_Institution :
Harris Semicond., Mountaintop, PA, USA
Abstract :
IGBTs with wide trench widths offer the possibility of an improved trade-off between conduction and switching loss due to the injection enhancement effect, while preserving the devices´ short-circuit withstand capability. This makes them promising candidates for motor control applications. 600 V IGBTs with trench widths of 8-12 μm have been successfully fabricated with excellent electrical characteristics. The critical trench shaping process is accomplished by the use of a long LOCOS-like oxidation after the deep and wide trench has been etched. They offer low on-state voltage drops, low turn-off losses, square RBSOA and good short-circuit capability
Keywords :
electric control equipment; electric motors; electrical conductivity; etching; insulated gate bipolar transistors; isolation technology; losses; oxidation; power bipolar transistors; power semiconductor switches; 600 V; 8 to 12 micron; LOCOS-like oxidation; SiO2-Si; conduction; critical trench shaping process; electrical characteristics; injection enhancement effect; motor control applications; on-state voltage drop; short-circuit capability; short-circuit withstand capability; square RBSOA; switching loss; trench etch; trench width; turn-off loss; wide trench IGBTs; Degradation; Electric breakdown; Etching; Insulated gate bipolar transistors; Motor drives; Passivation; Planarization; Resists; Surface resistance; Surface topography;
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5290-4
DOI :
10.1109/ISPSD.1999.764039
