Title :
Fabrication of a double-side IGBT by very low temperature wafer bonding
Author :
Hobart, K.D. ; Kub, F.J. ; Dolny, G. ; Zafrani, M. ; Neilson, J.M. ; Gladish, J. ; McLachlan, C.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
A bidirectional double-side IGBT has been successfully fabricated by very low temperature direct wafer bonding for the first time. The utility of the second MOS gate to control hole injection is demonstrated. Through optimized switching of the second gate, a 50% decrease in switching loss is observed
Keywords :
insulated gate bipolar transistors; optimisation; power bipolar transistors; power semiconductor switches; semiconductor device testing; wafer bonding; bidirectional double-side IGBT; direct wafer bonding; double-side IGBT fabrication; hole injection control; optimized second gate switching; second MOS gate; switching loss; very low temperature wafer bonding; Annealing; Anodes; Fabrication; Insulated gate bipolar transistors; Laboratories; Power semiconductor switches; Switching loss; Temperature sensors; Testing; Wafer bonding;
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5290-4
DOI :
10.1109/ISPSD.1999.764042
