• DocumentCode
    2792979
  • Title

    Simulation of multi-level radiation-induced charge trapping and thermally activated phenomena in SiO2

  • Author

    Paillet, P. ; Touron, J.L. ; Leray, J.L. ; Cirba, C. ; Michez, A.

  • Author_Institution
    CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
  • fYear
    1997
  • fDate
    15-19 Sep 1997
  • Firstpage
    50
  • Lastpage
    55
  • Abstract
    Charge trapping on several energy levels and thermally activated detrapping phenomena in SiO2 have been determined by finite elements simulation. The results obtained agree well with experimental charge detrapping measurements, and enable the simulation of post-irradiation effects in Si/SiO2 structures
  • Keywords
    MIS structures; electron traps; elemental semiconductors; finite element analysis; hole traps; radiation effects; silicon; silicon compounds; thermally stimulated currents; MOS structure; Si-SiO2; energy levels; finite element simulation; multilevel radiation induced charge trapping; post-irradiation effect; thermally activated charge detrapping; Charge carrier processes; Charge measurement; Current measurement; Differential equations; Electron traps; Energy states; Finite element methods; Photonic band gap; Poisson equations; Spontaneous emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
  • Conference_Location
    Cannes
  • Print_ISBN
    0-7803-4071-X
  • Type

    conf

  • DOI
    10.1109/RADECS.1997.698841
  • Filename
    698841
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2792979