Title :
Large reverse biased safe operating area for a low loss HiGT
Author :
Uchino, Yoshihiro ; Kobayashi, Hideo ; Mori, Mutsuhiro ; Saito, Ryuuchi
Author_Institution :
Res. Lab., Hitachi Ltd., Ibaraki, Japan
Abstract :
A high conductivity IGBT (HiGT) with a reverse biased safe operating area (RBSOA) as large as that of a conventional IGBT has been presented. The fabricated HiGT has a rated current of 50 A and a blocking capability of 3.3 kV. Optimizing the concentration of impurities in the hole carrier layer enabled the HiGT to turn off a current twice the rated current by applying 2200 V, which is the maximum voltage of the 1500 V line. This large RBSOA was maintained while achieving a short circuit capability and a better trade-off relation between the collect-emitter saturation voltage (VCE(sat)) and the turn-off loss. The VCE(sat) of this optimized HiGT was 1.3 V lower than that of a conventional IGBT. The turn-off loss, short circuit capability, and static and dynamic avalanche voltages were equivalent to those of a conventional IGBT
Keywords :
avalanche breakdown; electric current; electrical conductivity; impurity distribution; insulated gate bipolar transistors; losses; optimisation; power bipolar transistors; semiconductor device breakdown; 1500 V; 2200 V; 3.3 kV; 50 A; IGBT; RBSOA; blocking capability; collect-emitter saturation voltage; current turn-off; dynamic avalanche voltage; high conductivity IGBT; hole carrier layer; impurity concentration; large RBSOA; low loss HiGT; maximum line voltage; optimized HiGT; rated current; reverse biased safe operating area; short circuit capability; static avalanche voltage; turn-off loss; Conductivity; Insulated gate bipolar transistors; Metalworking machines; Noise reduction; Power dissipation; Size control; Tail; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5290-4
DOI :
10.1109/ISPSD.1999.764044
