Title :
A high dielectric constant thick film capacitor with copper electrode
Author :
Kawakita, Kouji ; Kimura, Suzushi ; Okinaka, Hideyuki ; Morimoto, Yuki
Author_Institution :
Matsushita Electron. Components Co. Ltd., Osaka, Japan
Abstract :
A high-dielectric-constant thick-film capacitor with a copper electrode has been developed. The dielectric, which consists of the composition Pb(Mg1/3Nb2/3)0.7Ti0.2 (Ni1/2W1/2)0.1O3 and 15 mol.% of PbO2NiO, is added as a sintering aid. The use of PbO2 makes it possible to manufacture the thick-film capacitor in a nitrogen atmosphere without oxidation of the copper electrode. The thick-film capacitor has a dielectric constant of 5000, a dissipation factor of less than 2.0%, and a resistivity of 5.7×10 12 Ω-cm. The electrical performance meets the Y5U specification in the EIA standard. In the accelerated life test, the high insulation resistance between conductors is maintained after 1000 h of testing
Keywords :
lead compounds; life testing; permittivity; sintering; thick film capacitors; Cu electrode; EIA standard; PbMgO3NbO3TiO3NiO3WO 3; Y5U specification; accelerated life test; dielectric constant thick film capacitor; dissipation factor; electrical performance; insulation resistance; nitrogen atmosphere; resistivity; sintering aid; Capacitors; Copper; Electrodes; High-K gate dielectrics; Insulation testing; Life testing; Manufacturing; Niobium; Nitrogen; Thick films;
Conference_Titel :
Electronic Manufacturing Technology Symposium, 1990 Proceedings, Competitive Manufacturing for the Next Decade. IEMT Symposium, Ninth IEEE/CHMT International
Conference_Location :
Washington, DC
DOI :
10.1109/IEMT9.1990.115014
