A high dielectric constant thick film capacitor with copper electrode

Author

Kawakita, Kouji ; Kimura, Suzushi ; Okinaka, Hideyuki ; Morimoto, Yuki

Author_Institution

Matsushita Electron. Components Co. Ltd., Osaka, Japan

fYear

1990

fDate

1-3 Oct 1990

Firstpage

247

Lastpage

251

Abstract

A high-dielectric-constant thick-film capacitor with a copper electrode has been developed. The dielectric, which consists of the composition Pb(Mg_1/3Nb_2/3)_0.7Ti_0.2(Ni_1/2W_1/2)_0.1O₃ and 15 mol.% of PbO₂NiO, is added as a sintering aid. The use of PbO₂ makes it possible to manufacture the thick-film capacitor in a nitrogen atmosphere without oxidation of the copper electrode. The thick-film capacitor has a dielectric constant of 5000, a dissipation factor of less than 2.0%, and a resistivity of 5.7×10 ¹² Ω-cm. The electrical performance meets the Y5U specification in the EIA standard. In the accelerated life test, the high insulation resistance between conductors is maintained after 1000 h of testing

Keywords

lead compounds; life testing; permittivity; sintering; thick film capacitors; Cu electrode; EIA standard; PbMgO₃NbO₃TiO₃NiO₃WO ₃; Y5U specification; accelerated life test; dielectric constant thick film capacitor; dissipation factor; electrical performance; insulation resistance; nitrogen atmosphere; resistivity; sintering aid; Capacitors; Copper; Electrodes; High-K gate dielectrics; Insulation testing; Life testing; Manufacturing; Niobium; Nitrogen; Thick films;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Manufacturing Technology Symposium, 1990 Proceedings, Competitive Manufacturing for the Next Decade. IEMT Symposium, Ninth IEEE/CHMT International

Conference_Location

Washington, DC

Type

conf

DOI

10.1109/IEMT9.1990.115014

Filename

115014