Title :
Energy capability of power devices with Cu layer integration
Author :
Chung, Young S. ; Willett, Terry ; Macary, Veronique ; Merchant, Steve ; Baird, Bob
Author_Institution :
Transp. Silicon Technol. Center, Motorola, Mesa, AZ, USA
Abstract :
Device level solutions are necessary for thermal management in smart power devices. For many automotive applications, the power pulses are too short for for packaging to affect the temperature. A thick copper layer is a potential solution because of its thermal properties. This paper reports for the first time experimental results on the energy capability of DMOS power devices with a thick copper layer integrated into a smart power technology. It was experimentally observed that a thick copper layer over the power device enhances energy capability significantly. The mechanics of the thick copper layer in increasing the energy capability is discussed
Keywords :
MOS integrated circuits; automotive electronics; cooling; copper; integrated circuit metallisation; integrated circuit packaging; metallic thin films; power integrated circuits; thermal management (packaging); Cu; Cu layer integration; DMOS power devices; automotive applications; device level thermal management; energy capability; packaging; power device; power devices; power pulses; smart power devices; smart power technology; thermal properties; thick copper layer; Automotive applications; Copper; Energy measurement; Packaging; Pulse shaping methods; Shape; Silicon; Temperature; Thermal conductivity; Thermal management;
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5290-4
DOI :
10.1109/ISPSD.1999.764051