Title :
A new concept for the lateral DMOS transistor for smart power IC´s
Author :
Zitouni, M. ; Morancho, F. ; Rossel, P. ; Tranduc, H. ; Buxo, J. ; Pagès, I.
Author_Institution :
LAAS-CNRS, Toulouse, France
Abstract :
In this paper, a new concept of lateral DMOSFET for smart power integrated circuits is proposed, in which a vertical trench is used under the gate end in the drift region
Keywords :
MOS integrated circuits; integrated circuit testing; isolation technology; power MOSFET; power integrated circuits; drift region gate end; lateral DMOS transistor; lateral DMOSFET; smart power IC; smart power integrated circuits; vertical trench; Automotive engineering; CMOS technology; Cost function; Diodes; Doping; Driver circuits; Electrical equipment industry; Power integrated circuits; Surface resistance; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5290-4
DOI :
10.1109/ISPSD.1999.764055
