Title :
Properties of CoolMOSTM between 420 K and 80 K-the ideal device for cryogenic applications
Author :
Schlögl, A.E. ; Deboy, G. ; Lorenzen, H.W. ; Linnert, U. ; Schulze, H.-J. ; Stengl, J.P.
Author_Institution :
Corp. Technol., Siemens AG, Munich, Germany
Abstract :
The electrical properties of CoolMOSTM, the first representative of a new generation of power MOSFETs, based on the concept of charge compensation, were investigated at temperatures between 80 K and 423 K. Since it unifies all the advantages of MOSFETs, where additionally higher current densities are possible, the device is not only very attractive for power electronic systems at ambient temperatures, but also for cryogenic temperatures T>77 K
Keywords :
charge compensation; cryogenic electronics; current density; low-temperature techniques; power MOSFET; semiconductor device testing; 77 K; 80 to 423 K; CoolMOS; MOSFETs; charge compensation; cryogenic applications; cryogenic temperatures; current density; electrical properties; power MOSFETs; power electronic systems; Circuits; Conductivity; Cryogenics; Current density; Diodes; Insulated gate bipolar transistors; MOSFETs; Power electronics; Power generation; Temperature;
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5290-4
DOI :
10.1109/ISPSD.1999.764063
