Title :
Analysis of the effect of charge imbalance on the static and dynamic characteristics of the super junction MOSFET
Author :
Shenoy, Praveen M. ; Bhalla, Anup ; Dolny, Gray M.
Author_Institution :
Ind. Power Product Dev., Harris Semicond., Mountaintop, PA, USA
Abstract :
In this paper, a novel device called the super junction MOSFET is analyzed using analytical modeling and numerical simulations. The effect of charge imbalance between the N and P pillars on the static and dynamic characteristics of the device is studied in detail. Simulations predict that this device is highly sensitive to charge imbalance if designed for optimum on-resistance. The breakdown voltage (BV) and Eoff sensitivity can be reduced considerably by degrading the specific on-resistance Ron,sp. The physics of the static and dynamic behaviour of this device under charge imbalance is explained with the help of numerical simulations
Keywords :
electric resistance; numerical analysis; power MOSFET; semiconductor device breakdown; semiconductor device models; N pillar; P pillar; analytical modeling; breakdown voltage; charge imbalance; dynamic behaviour; dynamic characteristics; numerical simulations; optimum on-resistance; specific on-resistance; static behaviour; static characteristics; super junction MOSFET; Degradation; Doping; Electric breakdown; Epitaxial layers; Equations; MOSFET circuits; Medium voltage; Neodymium; Power MOSFET; Virtual manufacturing;
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5290-4
DOI :
10.1109/ISPSD.1999.764069
