Title :
Wirebond reliability in IGBT-power modules: application of high resolution strain and temperature mapping
Author :
Mehrotra, Vivek ; He, Jun ; Dadkhah, M.S. ; Rugg, Kevin ; Shaw, Michael C.
Author_Institution :
Design & Reliability Dept., Rockwell Sci. Center, Thousand Oaks, CA, USA
Abstract :
A fracture mechanics-based model has been developed for the reliability of wirebonds in IGBT-based power modules. Initial correlation of the model has been achieved based upon measurements of extremely localized displacements and temperature distributions of wirebonds and devices during both transient and steady states. The measurements have been performed by high-resolution holographic interferometry and high-speed infrared microscopy. The wirebond geometry has been found to have a profound effect on the localized temperature distribution and hence reliability
Keywords :
fracture mechanics; holographic interferometry; insulated gate bipolar transistors; internal stresses; lead bonding; modules; optical microscopy; power bipolar transistors; semiconductor device measurement; semiconductor device models; semiconductor device packaging; semiconductor device reliability; temperature distribution; thermal stresses; IGBT-based power modules; IGBT-power modules; extremely localized displacement measurements; fracture mechanics-based model; high resolution strain mapping; high resolution temperature mapping; high-resolution holographic interferometry; high-speed infrared microscopy; localized temperature distribution; model correlation; reliability; steady states; temperature distribution measurements; transient states; wirebond geometry; wirebond reliability; wirebonds; Displacement measurement; Geometry; Holography; Insulated gate bipolar transistors; Interferometry; Microscopy; Multichip modules; Performance evaluation; Steady-state; Temperature distribution;
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5290-4
DOI :
10.1109/ISPSD.1999.764076
