DocumentCode
2793380
Title
Thermal and field dependencies of latent relaxation processes in irradiated MOS devices
Author
Emelianov, V.V. ; Sogoyan, A.V. ; Cherepko, S.V. ; Meshurov, O.V. ; Ulimov, V.N. ; Chumako, A.I. ; Rogov, V.I. ; Nikiforo, A.Y.
Author_Institution
Res. Inst. of Sci. Instrum., Moscow, Russia
fYear
1997
fDate
15-19 Sep 1997
Firstpage
56
Lastpage
60
Abstract
Latent interface trap buildup, latent positive charge annealing, and molecular hydrogen annealing response of irradiated MOSFET were studied. The mechanisms of latent process and latent processes implications for hardness assurance are discussed
Keywords
MOSFET; X-ray effects; annealing; electron beam effects; interface states; radiation hardening (electronics); MOSFET; X-ray irradiation; electron irradiation; field dependence; hardness assurance testing; latent interface trap buildup; latent positive charge annealing; latent relaxation process; molecular hydrogen annealing; thermal dependence; Annealing; Electrons; Hydrogen; Instruments; MOS devices; MOSFET circuits; Physics; Temperature; Testing; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
Conference_Location
Cannes
Print_ISBN
0-7803-4071-X
Type
conf
DOI
10.1109/RADECS.1997.698843
Filename
698843
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