Title :
Thermal and field dependencies of latent relaxation processes in irradiated MOS devices
Author :
Emelianov, V.V. ; Sogoyan, A.V. ; Cherepko, S.V. ; Meshurov, O.V. ; Ulimov, V.N. ; Chumako, A.I. ; Rogov, V.I. ; Nikiforo, A.Y.
Author_Institution :
Res. Inst. of Sci. Instrum., Moscow, Russia
Abstract :
Latent interface trap buildup, latent positive charge annealing, and molecular hydrogen annealing response of irradiated MOSFET were studied. The mechanisms of latent process and latent processes implications for hardness assurance are discussed
Keywords :
MOSFET; X-ray effects; annealing; electron beam effects; interface states; radiation hardening (electronics); MOSFET; X-ray irradiation; electron irradiation; field dependence; hardness assurance testing; latent interface trap buildup; latent positive charge annealing; latent relaxation process; molecular hydrogen annealing; thermal dependence; Annealing; Electrons; Hydrogen; Instruments; MOS devices; MOSFET circuits; Physics; Temperature; Testing; Threshold voltage;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
Conference_Location :
Cannes
Print_ISBN :
0-7803-4071-X
DOI :
10.1109/RADECS.1997.698843
