Title :
4.5 kV-fast-diodes with expanded SOA using a multi-energy proton lifetime control technique
Author :
Humbel, O. ; Galster, N. ; Bauer, F. ; Fichtner, W.
Author_Institution :
Integrated Syst. Lab., Eidgenossische Tech. Hochschule, Zurich, Switzerland
Abstract :
This paper presents a 4.5 kV diode fabricated using a new ion irradiation technique whereby electrons are replaced by protons in a second irradiation step. The second proton peak is located close to the middle of the n-base. Compared to the combined ion-electron irradiation, diodes with a double proton peak show a smaller maximum reverse-recovery current and a much smoother tail current behavior. The new device has an excellent ruggedness, and is able to withstand a peak power of 1 MW/cm 2
Keywords :
electric current; ion implantation; power semiconductor diodes; power semiconductor switches; proton effects; semiconductor device models; semiconductor device reliability; semiconductor device testing; 4.5 kV; device ruggedness; diode fabrication; double proton peak diodes; electron replacement; expanded SOA; fast diodes; ion irradiation technique; ion-electron irradiation; maximum reverse-recovery current; multi-energy proton lifetime control technique; n-base; peak power; protons; second irradiation step; second proton peak; tail current behavior; Anodes; Cathodes; Charge carrier lifetime; Diodes; Electrons; Protons; Semiconductor optical amplifiers; Solids; Switching circuits; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5290-4
DOI :
10.1109/ISPSD.1999.764078
