Title :
Explosion tests on IGBT high voltage modules
Author :
Gekenidis, Sotirios ; Ramezani, Ezatollah ; Zeller, Hansrudi
Author_Institution :
ABB Semicond. AG, Lenzburg, Switzerland
Abstract :
In this paper, we report on surge current experiments with IGBT modules in low inductance, snubberless circuits. We give design guidelines for robust modules and robust converter designs, discuss scenarios of consequential damage and propose worst case test conditions for explosion safety. For wire bonded modules, the limit for material ejection is at a stored capacitive energy of about 10 kJ. In a good design, the shock wave trajectory is defined and no metallic parts obstruct the plasma expansion. The worst case damage occurs if, initially, a single chip fails. Press-pack modules can be designed to contain the plasma inside the housing in the case of a short circuit. Simple protective measures are sufficient to protect personnel
Keywords :
detonation waves; electric current; explosions; insulated gate bipolar transistors; lead bonding; modules; plasma confinement; plasma heating; power bipolar transistors; power convertors; protection; safety; semiconductor device packaging; surges; 10 kJ; IGBT high voltage modules; IGBT modules; consequential damage; design guidelines; explosion safety; explosion tests; housing; low inductance snubberless circuits; material ejection limit; personnel protection; plasma containment; plasma expansion; press-pack modules; protective measures; robust converter designs; robust modules; shock wave trajectory; short circuit; single chip failure; stored capacitive energy; surge current; wire bonded modules; worst case damage; worst case test conditions; Circuit testing; Explosions; Insulated gate bipolar transistors; Plasma materials processing; Plasma measurements; Plasma waves; Protection; Robustness; Surges; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5290-4
DOI :
10.1109/ISPSD.1999.764079