A new trench bipolar junction diode (TBJD)

Author

You, Budong ; Huang, Alex Q. ; Sin, Johnny K O

Author_Institution

Dept. of Electr. & Comput. Eng, Virginia Tech., Blacksburg, VA, USA

fYear

1999

fDate

1999

Firstpage

133

Lastpage

136

Abstract

In this paper, a new power diode structure called the trench bipolar junction diode (TBJD) is proposed. For the first time, the feasibility of controlling the anode injection efficiency of a diode by the action of an integrated reverse active transistor is demonstrated. The base of the reverse active transistor is shielded by a deep p⁺ trench region in the TBJD to achieve superior dynamic characteristics compared to the conventional p-i-n diode structure. Both simulation and experimental results are provided to illustrate this novel structure

Keywords

isolation technology; numerical analysis; power semiconductor diodes; semiconductor device models; semiconductor device testing; TBJD; diode anode injection efficiency; dynamic characteristics; integrated reverse active transistor; p-i-n diode structure; p⁺ trench region; power diode structure; reverse active transistor base shielding; simulation; trench bipolar junction diode; Anodes; Doping; Electrostatic discharge; Leakage current; Low voltage; P-i-n diodes; Power electronics; Power engineering and energy; Schottky diodes; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on

Conference_Location

Toronto, Ont.

ISSN

1063-6854

Print_ISBN

0-7803-5290-4

Type

conf

DOI

10.1109/ISPSD.1999.764080

Filename

764080