Title :
Static and dynamic characteristics of a 1100 V, double-implanted, planar, 4H-SiC PiN rectifier
Author :
Khemka, V. ; Patel, R. ; Ramungul, N. ; Chow, T.P. ; Gutmann, R.J.
Author_Institution :
Center for Integrated Electron. & Electron. Manuf., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
Implanted, high-voltage, planar junction rectifiers in 4H-SiC are fabricated using a deep boron implanted junction along with a shallow heavily doped layer created by co-implantation of aluminum and carbon. The fabricated junctions can block up to about 1100 V with low forward drop and low leakage current. The static and dynamic characteristics of these rectifiers have been investigated at both room temperature and high temperature
Keywords :
aluminium; boron; carbon; dynamic response; ion implantation; p-i-n diodes; power semiconductor diodes; semiconductor device measurement; silicon compounds; solid-state rectifiers; wide band gap semiconductors; 1100 V; 4H-SiC; SiC:Al,C; SiC:B; aluminum/carbon co-implantation; blocking capability; deep boron implanted junction; double-implanted planar 4H-SiC PiN rectifier; dynamic characteristics; forward voltage drop; high-voltage planar junction rectifiers; leakage current; rectifiers; shallow heavily doped layer; static characteristics; Aluminum; Annealing; Boron; Conductivity; Doping; Impurities; Rectifiers; Silicon carbide; Temperature; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-5290-4
DOI :
10.1109/ISPSD.1999.764081
